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Material: bulk single crystal MCT	Hg_1-xCd_xTe
Type	N-type or P–type (or No doped)
Diameter	Not less than 50 mm
Wafer planks, thickness	>5x15 mm, 0.5 - 1.0 mm
Wafer surface finish	As-cut, polish 2 side
Orientation	[100], [111], [110]
Mole fraction of CdTe, (x)	0.15-0.18, 0.19–0.21, 0.26-0.30
Composition heterogeneity along a wafer, mole fraction	no more ∆x= 0,005
Electron carrier concentration, 77°K	N - (0.5-10)·10¹⁴; P - (0.8-100)·10¹⁵
μ _n mobility for N type @ 77°K, cm²/V·s	>= 1·10⁵
μ _p mobility for P type @ 77°K, cm²/V·s	>= (0.02 – 3)·10⁴
Etch pit density, cm^-2	<= 2·10⁵


	Mercury Cadmium Telluride (Hg_1-xCd_xTe) Bulk single crystals Technical data