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SixGe1-x
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Bulk crystals of
SixGe1-x solid solutions are promising
candidates for a variety of microelectronic and optoelectronic
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device applications such as:
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- Based on Si/SiGe heterojunction
bipolar transistors (HBT),
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- High electron mobility field effect transistors,
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- Photo detectors,
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- Solar cells,
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- Thermoelectric power generators,
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- Tunable neutron and x-ray monochromators,
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- High speed temperature sensors and
γ-ray
detectors.
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SixGe1-x single
crystals for microelectronic and optoelectronic device
applications have generally been prepared
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in the form of thin films grown on a
silicon substrate by various epitaxial growth techniques such as:
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- Molecular Beam
Epitaxy (MBE),
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- Rapid Thermal Chemical Vapor Deposition (RTCVD),
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- Chemical Vapor Deposition (CVD),
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- Ultra High Vacuum Chemical Vapor Deposition (UHV/CVD).
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Bulk monocrystalline SixGe1-x
alloy also has expected application as a photo-detector, a
thermo-generator,
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an x-ray and neutron monochromator, etc.
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In order to achieve high quality SixGe1-x
crystals with different germanium contents, a variety of
melt crystal growth
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techniques, such as Czochralski, Bridgman are used.
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